1/3 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.03 - rev. a high voltage discharge, high speed switching, low noise (60v, 1a) 2sc5865 ? features ? dimensions (unit : mm) 1) high speed switching. ( tf : typ. : 50ns at i c = 1.0 a) 2) low saturation voltage, typically. (typ. : 200mv at i c = 500ma, i b = 50ma) 3) strong discharge power for inductive load and capacitance load. 4) low noise. 5) complements the 2sa2092. ? applications high speed switching, low noise ? structure npn silicon epitaxial planar transistor ? packaging specifications taping 2sc5865 type tl 3000 package basic ordering unit (pieces) code ? absolute maximum ratings (ta=25 ? c) parameter v v v a mw ? 1 pw = 10ms ? 2 each terminal mounted on a recommended land ? 2 ? 1 c a c v cbo v ceo i c p c tj v ebo i cp tstg symbol 60 60 6 1.0 2.0 500 150 ? 55 to + 150 limits unit collector-base voltage collector-emitter voltage emitter-base voltage collector current power dissipation junction temperature range of storage temperature each lead has same dimensions abbreviated symbol : vu tsmt3 (1) base (2) emitter (3) collector 0 ~ 0.1 0.16 0.85 1.0max 0.7 0.3 ~ 0.6 ( 2 ) ( 1 ) ( 3 ) 2.9 2.8 1.9 1.6 0.95 0.95 0.4
2/3 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.03 - rev. a data sheet 2sc5865 ? electrical characteristics (ta=25 ? c) parameter symbol bv ebo i cbo i ebo v ce(sat) ft h fe cob ton min. 6 ? ? ? 120 ? ? ? ? ? 250 ?? 10 50 ? 1.0 1.0 ? 200 500 390 ? ? ? i e = 100 a v ce = 2v, i c = 100ma v cb = 40v v eb = 4v i c = 500ma, i b = 50ma i c = 1a, i b1 = 100ma i b2 = ? 100ma v cc 25v v ce = 10v, i e = ? 100ma, f = 10mhz v cb = 10v, i e =0 ma, f = 1mhz v a a mhz mv pf ns tstg ? 130 ? ns tf ? 50 ? ns typ. max. unit conditions bv cbo 60 ?? v i c = 100 a collector-base breakdown voltage collector cut-off current dc current gain transistor frequency collector output capacitance turn-on time storage time fall time emitter cut-off current collector-emitter saturatioin voltage bv ceo 60 ?? i c = 1ma v collector-emitter breakdown voltage emitter-base breakdown voltage ? 2 ? 1 1 non repetitive pulse ? 2 see switching characteristics measurement circuits ? h fe rank qr 120-270 180-390 ? electrical characteristic curves collector current : i c (ma) 5 1234 0 0 40 80 120 160 200 collector to emitter voltage : v ce ( v ) fig.1 typical output characteristic s i b =500 a 0 a 50 a 100 a 150 a 200 a 250 a 300 a 350 a 400 a 450 a 1 0.01 0.1 1 0 1000 100 10 fig.2 switching time collector current : i c (a) switching time (ns) ta = 25 c v cc = 25v i c /i b =10/1 tstg tf ton fig.3 dc current gain vs. collector current ( ) collector current : i c (a) dc current gain : hfe 0.001 0.01 0.1 1 0 1 1 10 100 1000 ta = 125 c ta = 25 c ta = ? 40 c v ce = 2v 0.001 0.01 0.1 1 0 1 1 10 100 1000 dc current gain : hfe v ce = 5v v ce = 3v v ce = 2v collector current : i c (a) fig.4 dc current gain vs. collector current ( ? ) ta = 25 c 0.001 0.01 0.1 0.01 0.1 10 1 collector saturation voltage : v ce (sat )(v) collector current : i c (a) 10 1 fig.5 collector-emitter saturation voltag e vs. collector current ( ) i c /i b = 10/1 ta = 125 c ta = 25 c ta = ? 40 c 0.001 0.1 0.01 1 0 1 0.01 0.1 1 10 collector saturation voltage : v ce ( sat)(v) collector current : i c ( a) f ig.6 collector-emitter saturation voltag e vs. collector current ( ? ) i c /i b = 20/1 i c /i b = 10/1 i c /i b = 100/1 ta = 25 c
3/3 www.rohm.com c 2011 rohm co., ltd. all rights reserved. 2011.03 - rev. a data sheet 2sc5865 collector current : i c (a) base emitter saturation voltage : v be (sat ) (v) fig.7 base-emitter saturation voltag e vs. collector current 0.001 0.01 0.1 10 1 1 0.1 10 ta = 125 c i c /i b = 10/1 ta = 25 c ta = ? 40 c 0.001 0.01 0.1 1 0 1 1 10 100 1000 transition frequency : f t (mhz) ta = 25 c v ce =10v emitter current : i e (a) fig.8 transition frequency 0.1 10 10 0 1 1 10 100 collector output capacitance : cob (pf ) ta = 25 c f=1mhz collector to base voltage : v cb ( v) fig.9 collector output capacitance 0.01 0.1 10 1 collector current : i c (a) 0 0.5 0.6 0.7 0.8 0.9 1.1 1.2 1.3 1.4 0.1 0.2 0.3 0.4 1 1.5 base to emitter voltage : v be (v) fig.10 ground emitter propagatio n characteristics ta = 125 c ta = 25 c ta =? 40 c ? switching characteristics measurement circuits c ollector current w aveform b ase current w aveform i b1 i b1 90% 10% i b2 i b2 i c v in p w i c r l =25 v cc 25 v p w 50 s duty cycle 1% ton tstg tf
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